Neutron irradiation of cold GaAs devices and circuits made with an ion-implanted monolithic process-Reference-Cited by-同舟云学术

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Neutron irradiation of cold GaAs devices and circuits made with an ion-implanted monolithic process

Published:1997-04 Issue:3 Volume:388 Page:399-407
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Battistoni G,Camin D.V,Fedyakin N,Pessina G,Sala P

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Monolithic current-sensitive preamplifier for the Accordion LAr calorimeter

2. Monolithic cryogenic preamplifiers based on large gate-area GaAs MESFETs

3. Proc. 1st Workshop on Electronics for LHC Experiments;Camin,1995

4. A neutron irradiation facility featuring cryogenic temperatures and dedicated to Large Hadron Collider detector design

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors;Journal of The Electrochemical Society;2002

2. Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures;Solid-State Electronics;2001-07

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