Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Integration of GalnP/GaAs heterojunction bipolar transistors and high electron mobility transistors
2. InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits
3. Monolithically integrated HBT/MESFET circuit
4. Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
5. Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage;Thin Solid Films;2012-10
2. Microwave complementary doped-channel field-effect transistors;Superlattices and Microstructures;2009-01
3. Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs;Solid-State Electronics;2008-01
4. Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors;Journal of The Electrochemical Society;2007
5. Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors;Superlattices and Microstructures;2005-01
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