Copper electromigration modeling including barrier layer effect
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Adhesion and reliability of copper interconnects with Ta and TaN barrier layers;Lane;J Mater Res,2000
2. Void formation and growth during electromigration in thin films;Rosenberg;J Appl Phys,1971
3. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2;Shatzkes;J Appl Phys,1986
4. Numerical investigations of the electromigration boundary value problem;Clement;J Appl Phys,1992
5. Vacancy supersaturation model for electromigration failure under dc and pulsed dc stress;Clement;J Appl Phys,1992
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1. The effects of applied current on one-dimensional interdiffusion between copper and nickel in spark plasma sintering;Journal of Applied Physics;2014-10-21
2. XPS Investigation of the Atomic Layer Deposition Half Reactions of Bis(N-tert-butyl-N′-ethylpropionamidinato) Cobalt(II);Chemistry of Materials;2014-04-03
3. Skin effect of on-chip copper interconnects on electromigration;Solid-State Electronics;2002-12
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