Skin effect of on-chip copper interconnects on electromigration

Author:

Wu W,Yuan J.S

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Chang L, Chang K, Mathews R. Proceedings on 2000 International Symposium on Packaging Design (ISPD 2000), San Diego, CA, p. 117–20

2. Electromigration—A brief survey and some recent results

3. Adhesion and reliability of copper interconnects with Ta and TaN barrier layers

4. Copper electromigration modeling including barrier layer effect

5. Advanced engineering electromagnetics;Balanis,1989

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1. Time Domain Analysis of Skin Effect in Nonuniform Interconnection Using the FDTD Technique;Advances in Applied Mechanics;2023-12-19

2. Mitigating Electromigration in Physical Design;Fundamentals of Electromigration-Aware Integrated Circuit Design;2018

3. Fundamentals of Electromigration;Fundamentals of Electromigration-Aware Integrated Circuit Design;2018

4. Fabrication and electrical performance of through silicon via interconnects filled with a copper/carbon nanotube composite;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03

5. Interconnects for nanoscale MOSFET technology: a review;Journal of Semiconductors;2013-06

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