Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions-Reference-Cited by-同舟云学术

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Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions

Published:2002-11 Issue:11 Volume:46 Page:1855-1862
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Borsoni G,Le Roux V,Laffitte R,Kerdilès S,Béchu N,Vallier L,Korwin-Pawlowski M.L,Vannuffel C,Bertin F,Vergnaud C,Chabli A,Wyon C

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Direct formation of dielectric thin films on silicon by low energy ion beam bombardment;Todorov;Vacuum,1986

2. Low energy ion beam oxidation of silicon surfaces: ballistics, diffusion and chemistry;Todorov;Nucl. Instr. Meth. B,1992

3. Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si1−xGex/Si(100);Vancauwenberghe;Mater. Sci. Eng. B,1992

4. Silicon carbide and oxide deposition using low energy (5–100 eV) beams of C+, O+, and CO+ ions;Kim;Nucl. Instr. Meth. B,1995

5. Deposition of SiO thin films by combined low-energy ion-beam and molecular-beam epitaxial method;Shibata;Jpn. J. Appl. Phys.,2000

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4. Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors;Journal of Vacuum Science & Technology B;2018-09

5. On the nano-hillock formation induced by slow highly charged ions on insulator surfaces;Solid-State Electronics;2007-10

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