Low energy ion beam oxidation of silicon surfaces: ballistics, diffusion and chemistry
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Oxidation of silicon by a low‐energy ion beam: Experiment and model
2. Direct formation of dielectric thin films on silicon by low energy ion beam bombardment
3. Effect of organic contaminants on the oxidation kinetics of silicon at room temperature
4. Growth mechanism of thin oxide films under low-energy oxygen-ion bombardment
5. On the mechanism of sputtering of SiO2 by Ar at ion energies near the sputtering threshold
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1. Detailed analysis of the silicon surface under low-energy oxygen bombardment at atomic resolution;Physical Review B;2012-08-21
2. Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study;Journal of Applied Physics;2006-09-15
3. Computer simulations of surface analysis using ion beams;Progress in Surface Science;2006-01
4. Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study;Applied Surface Science;2004-06
5. Comparison of Dynamic Simulations with RBS Measurements of Low Energy Ion Implantation of Sb + into SiO 2 /Si Substrates;Microchimica Acta;2004-04-01
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