Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study-Reference-Cited by-同舟云学术

Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study

Published:2004-06 Issue: Volume:231-232 Page:603-608
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ignatova V.A.,Conard T.,Möller W.,Vandervorst W.,Gijbels R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

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2. Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks

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4. R. Smith, M. Jakas, D. Ashworth, B. Oven, M. Bowyer, I. Chakarov, R. Webb, Atomic and Ion Collisions in Solids and at Surfaces—Theory, Simulation and Applications, Cambridge University Press, Cambridge, 1997.

5. V. Ignatova, I. Katardjiev, I. Chakarov, D. Karpuzov, Computer simulations of ion–solid interactions for materials characterization, in preparation.

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