Silicon carbide and oxide deposition using low energy (5–100 eV) beams of C+, O+, and CO+ ions-Reference-Cited by-同舟云学术

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Silicon carbide and oxide deposition using low energy (5–100 eV) beams of C+, O+, and CO+ ions

Published:1995-12 Issue:1-4 Volume:106 Page:137-141
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kim B.C.,Hahn J.R.,Kang H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Silicon processing for The VLSI Era;Wolf,1990

2. Amorphous and Crystalline Silicon Carbide;Powell,1989

3. Silicon nitride formation by low energy N+ and N+2 ion beams

4. Ion beam nitridation of a Si(111) surface: effects of ion reactivity and thermal treatment

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions;Solid-State Electronics;2002-11

2. REACTIVE COLLISIONS OF HYPERTHERMAL ENERGY MOLECULAR IONS WITH SOLID SURFACES;Annual Review of Physical Chemistry;2002-10

3. Reactive scattering of O+ on oxidized Si(001);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-08

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