Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model

Author:

Sallese Jean-Michel,Bucher Matthias,Krummenacher François,Fazan Pierre

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. A charge-sheet model of the MOSFET;Brews;Solid State Electron.,1978

2. The need for an explicit model describing MOS transistors in moderate inversion;Bagheri;Electron. Lett.,1985

3. Tsividis YP. Operation and modeling of the MOS transistor, McGraw-Hill, 1987, second ed., 1999

4. MISNAN––a physically based continuous MOSFET model for CAD applications;Boothroyd;IEEE Trans. Comput.-Aid. Des.,1991

5. Unified complete MOSFET model for analysis of digital and analog circuits;Miura-Mattausch;IEEE Trans. Comput.-Aid. Des.,1996

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