Parallel conduction and non-linear optoelectronic response of an n-channel pseudomorphic high electron mobility transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Microwave Performance of an Optically Controlled AIGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET
2. Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMT's under optical illumination
3. Optoelectronic d.c. and r.f. behavior ofInP/InGaAs based HEMTs
4. High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor
5. Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photodetection mechanism in p-channel pseudomorphic MODFET;SPIE Proceedings;2000-07-14
2. Comparison of photoresponsive drain conduction and gate leakage in n-channel pseudomorphic HEMT and MESFET under electro-optical stimulations;IEEE Electron Device Letters;2000-06
3. Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations;IEEE Electron Device Letters;2000-03
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