Comparison of photoresponsive drain conduction and gate leakage in n-channel pseudomorphic HEMT and MESFET under electro-optical stimulations-Reference-Cited by-同舟云学术

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Comparison of photoresponsive drain conduction and gate leakage in n-channel pseudomorphic HEMT and MESFET under electro-optical stimulations

Published:2000-06 Issue:6 Volume:21 Page:264-267
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim D.M.,Kim H.J.,Lee J.I.,Lee Y.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/18294/00843145.pdf?arnumber=843145

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical modulation of the effective channel thickness in GaAs field effect transistors with a Schottky gate (MESFETs);Journal of Applied Spectroscopy;2006-05

2. P-channel MODFET as an optoelectronic detector;Materials and Devices for Optical and Wireless Communications;2002-08-30

3. Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor;Applied Physics Letters;2000-12-11

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