Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations-Reference-Cited by-同舟云学术

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Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations

Published:2000-03 Issue:3 Volume:21 Page:93-96
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim D.M.,Song S.H.,Baek K.H.,Kim D.J.,Kim H.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/17834/00823567.pdf?arnumber=823567

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Numerical Modeling of Terahertz Photoconductive Antennas;Journal of Infrared, Millimeter, and Terahertz Waves;2014-03-09

2. Effects of gate sidewall recess on Al0.2Ga0.8As/ In0.15Ga0.85As PHEMTs by citric-based selective etchant;Journal of Materials Science: Materials in Electronics;2005-08

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