Plasma charging damage during over-etch time of aluminum-Reference-Cited by-同舟云学术

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Plasma charging damage during over-etch time of aluminum

Published:1998-06 Issue:6 Volume:42 Page:911-913
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Shin Hyungcheol,Park Geunsook,Hu Chenming

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Reduced Device Damage Using An Ozone Based Photoresist Removal Process

2. Aum, P. K. and Dao, T., International Symposium on Plasma Process-Induced Damage. 1996, p. 15

3. Park, D., Bui, N., Hu, C. and Yue, J., International Symposium on Plasma Process-Induced Damage. 1996, p. 27

4. Kawamoto, Y., Proc. 1985 Dry Process Symp. The Inst. Elect. Eng. of Japan, 1985, p. 132

5. Tsunokuni, K., Nojiri, K., Kuboshima, S. and Hirobe, K., Extended Abstracts of the 19th Conf. On Solid State Devices and Materials. 1987, p. 195

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet and Dry Etching Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15

2. Mechanism of Plasma Charging Damage I;Plasma Charging Damage;2001

3. A new charge model including quantum mechanical effects in MOS structure inversion layer;Solid-State Electronics;2000-09

4. Dependence of plasma process induced damage on the transistor gate area;2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538)

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