A new charge model including quantum mechanical effects in MOS structure inversion layer-Reference-Cited by-同舟云学术

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A new charge model including quantum mechanical effects in MOS structure inversion layer

Published:2000-09 Issue:9 Volume:44 Page:1697-1702
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ma Yutao,Liu Litian,Deng Wei,Tian Lilin,Li Zhijian,Yu Zhiping

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Self-Consistent Results forn-Type Si Inversion Layers

2. Electronic properties of two-dimensional systems

3. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

4. Effective density-of-states approach to QM correction in MOS structure;Ma;Solid-State Electron,2000

5. Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review;IETE Technical Review;2012

2. An analysis of some semi-classical and quantum mechanical surface potential models of MOS inversion layer;2008 26th International Conference on Microelectronics;2008-05

3. Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction;Microelectronics Reliability;2007-02

4. A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation;Semiconductor Science and Technology;2004-06-10

5. Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model;Solid-State Electronics;2004-05

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