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Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model

  • Published:2004-05 Issue:5 Volume:48 Page:781-787
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Prégaldiny Fabien,Lallement Christophe,Mathiot Daniel

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate C-V Characteristics of n-Channel MOSFET Considering Quantum Mechanical Effects;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07

2. Semi-empirical modeling of rectangular triple gate FinFET incorporating the effect of 2D quantum confinement;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

3. Design space exploration of hysteretic negative capacitance ferroelectric FETs based on static solutions of Landau–Khalatnikov model for nonvolatile memory applications;Japanese Journal of Applied Physics;2021-03-01

4. Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2020-09

5. A Compact Physics Analytical Model for Hot-Carrier Degradation;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04
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