1. Lieberman, M.A. and A.J. Lichtenberg, Principles of Plasma Discharges and Materials Processing. 1994, New York: John Wiley & Son.
2. Chapman, B., Glow Discharge Processes. 1980, New York: John Wiley & Son.
3. Tsunokuni, K., et al., The effect of charge build-up on gate oxide breakdown during dry etching. in 19th Conf. Solid State Devices & Materials. 1987. p. 195.
4. Kawamoto, Y., MOS Gate Insulator Breakdown Caused by Exposure to Plasma. in Dry Process Symp. 1985. p. 132.
5. Mantei, T.D., Substrate Biasing for Plasma Etching. J. Electrochem. Soc, 1983. 130: p. 1958.