Band-gap energy anomaly observed in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Photoluminescence and electrical studies of Si‐doped AlxGa1−xAs grown on various substrate orientations by metalorganic chemical vapor deposition
2. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
3. Photoluminescence spectra of highly doped AlxGa1−xAs grown by molecular‐beam epitaxy
4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
5. Long-Range Order inAlxGa1−xAs
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