Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides-Reference-Cited by-同舟云学术

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Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Published:2000-11 Issue:11 Volume:44 Page:2001-2007
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ang Chew-Hoe,Ling Chung-Ho,Cho Byung-Jin,Kim Sun-Jung,Cheng Zhi-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Baglee DA, Smayling MC. The effects of write/erase cycling on data loss in EEPROM's. IEDM Tech Dig 1985;624–7

2. SILC-related effects in flash E2PROM's – Part II: prediction of steady-state SILC-related disturb characteristics;Blauwe;IEEE Trans Electron Dev,1998

3. Naruke K, Taguchi S, Wada M. Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness. IEDM Tech Dig 1988;424–7

4. Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics;Satoh;IEEE Trans Electron Dev,1998

5. A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation;Cho;Solid-State Electron,2000

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization;The European Physical Journal Applied Physics;2004-06-25

2. Radiation Damage in Silicon MOS Devices;Radiation Effects in Advanced Semiconductor Materials and Devices;2002

3. Characterization and modeling of the tunneling current in Si–SiO2–Si structures with ultra-thin oxide layer;Microelectronic Engineering;2001-11

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