The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology-Reference-Cited by-同舟云学术

The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology

Published:2001-01 Issue:1 Volume:45 Page:71-77
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luther-King N,Sweet M,Spulber O,Vershinin K,Ngw C.K,Bose S.C,De Souza M.M,Sankara Narayanan E.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Baliga BJ, Adler MS, Gray PV, Love RP, Zommer M. The insulated gate rectifier (IGR): a new power switching device. IEEE IEDM Tech Dig 1982:264–67

2. Shimuzu Y, Kimura S, Kozaka H, Tanaka T, Matsuura N, Onose H, Sakrara S. High power GTO with high turn-off ruggedness. ISPSD’97. p. 101–4

3. Sakano J, Kobayashi H, Mori M. Large SOA IGCT with p-base clamp. ISPSD’98. p. 155–8

4. Yoshikawa K, Koga T, Fuji T, Katoh T, Takahashi Y. Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT. ISPSD'99. p. 177–80

5. Gottert J. IGBT modules: vertically optimized NPT structure delivers 6.5 kVdc blocking voltage and improved on-state voltage. PCIM. October 1999. p. 42–50

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2008-05

2. MOS Control Device Concepts for AC–AC Matrix Converter Applications: The HCD Concept for High-Efficiency Anode-Gated Devices;IEEE Transactions on Electron Devices;2005-09

3. Striped anode engineering: a concept for fast switching power devices;Solid-State Electronics;2002-06

4. Anode-gated MOS controlled thyristor with ultra-fast switching capability;ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.