1. Experimental study on plasma engineering in 6500V IGBT;Wikstrom;ISPSD'2000,2000
2. 4500 trench IEGT having superior turn-on switching characteristics;Ninomiya;ISPSD'2000,2000
3. The 6.5 kV CIGBT in the homogenous base technology;Luther-King;Solid-State Electron,2001
4. The field stop IGBT: a new power device concept with great improvement potential;Lasker;Proc ISPSD'2000,2000
5. Punch-through IGBTs with homogenous N-Base operating at 4 kV line voltage;Dettmer;ISPSD'95,1995