Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
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4. A new shift and ratio method for MOSFET channel-length extraction;Taur;IEEE Electron Dev Lett,1992
5. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors;Pao;Solid State Electron,1966
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extraction of series resistance using physical mobility and current models for MOSFETs;Solid-State Electronics;2008-02
2. A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions;Solid-State Electronics;2006-03
3. Characterisation of series resistance degradation through charge pumping technique;Microelectronics Reliability;2003-04
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