Characterisation of series resistance degradation through charge pumping technique-Reference-Cited by-同舟云学术

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Characterisation of series resistance degradation through charge pumping technique

Published:2003-04 Issue:4 Volume:43 Page:617-624
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Manhas S.K,Chandra Sehkar D,Oates A.S,De Souza M.M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Structure-enhanced MOSFET degradation due to hot-carrier injection;Hsu;IEEE Electron Dev. Lett.,1984

2. A comparison of early stage hot carrier degradation behaviour in 5 V and 3 V submicron low doped drain metal oxide semiconductor field effect transistors;De Souza;Microelectron. Reliab.,2001

3. Manhas SK, DeSouza MM, Oates AS, Chetlur SC, Sankara Narayanan EM. Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs. Proc IEEE Int Reliab Phys Symp, 2000. p. 108

4. Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFET’s;Raychaudhuri;IEEE Trans. Electron Dev.,1996

5. An analytic model for self-limiting behavior of hot-carrier degradation in 0.25-μm n-MOSFET’s;Liang;IEEE Electron Dev. Lett.,1992

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