Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy

Published:2000-11 Issue:11 Volume:44 Page:1909-1916
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yoon S.F,Yip K.H,Zheng H.Q,Gay B.P

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

3. Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71)

4. Casey Jr HC, Panish MB. Heterostructure lasers. pt. B. New York, NY: Academic; 1978. p. 20

5. Se‐related deep levels in InGaAlP

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1. Is HEMT operating in 2D mode?;Microelectronics Journal;2009-03

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