Author:
Herden M,Bauer A.J,Beichele M,Ryssel H
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Physical models of boron diffusion in ultrathin gate oxides;Fair;J Electrochem Soc,1997
2. Gate engineering for deep-submicron CMOS transistors;Yu;IEEE Trans Electron Dev,1998
3. Kuroi T, Kusunoki S, Shirahata M, Okumara Y, Kobayashi M, Inuishi M, Tsubouchi N. The effects of nitrogen implantation into p+ poly-silicon gate on gate oxide properties. IEEE Symp VLSI Technology, Dig Tech Papers, 1994:107
4. The effect of nitrogen in a p+ polysilicon gate on boron penetration through the gate oxide;Nakayama;J Electrochem Soc,1997
5. Green ML, Brasen D, Feldman LC, Garfunkel E, Gusev EP, Gustafsson T, Lennard WN, Lu HC, Sorsch T. Thermal routes to ultrathin oxynitrides. In: Garfunkel E, Gusev E, Vul' A, editors. Fundamental aspects of ultrathin dielectrics on Si-based devices. Dordrecht: Kluwer; 1998. p. 181
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献