Effect of thermal stability of GaN epi-layer on the Schottky diodes-Reference-Cited by-同舟云学术

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Effect of thermal stability of GaN epi-layer on the Schottky diodes

Published:2000-07 Issue:7 Volume:44 Page:1203-1208
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee K.N,Cao X.A,Abernathy C.R,Pearton S.J,Zhang A.P,Ren F,Hickman R,Van Hove J.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Binari SC, Dietrich HB. In: Pearton SJ, editor. GaN and related materials, NY: Gordon and Breach, 1997. p. 509–34

2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

3. Electrical and structural analysis of high-dose Si implantation in GaN

4. Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

5. Annealing of ion implanted gallium nitride

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1. Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures;Journal of Semiconductors;2017-11

2. Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach;Advanced Materials Research;2014-02

3. Gate Leakage Current Suppression in AlGaN/GaN HEMT by RTP Annealing;Physics of Semiconductor Devices;2014

4. N- and Ga-K-edge XAFS study of the effect of annealing on In implanted GaN;physica status solidi (c);2012-12-05

5. Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts;Journal of Applied Physics;2008-11

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