Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach

Abstract

This paper reports the temperature dependent DC and RF characteristics of n-GaN Schottky diode simulated using Atlas/Blaze developed by Silvaco. It was found that as the temperature increases from 300K to 900K the forward current decreases due to lowering of the Schottky barrier with an increase in series-resistance and ideality factor. These observations indicates that tunneling behavior dominates the current flow rather than thermionic emission. Furthermore, the breakdown voltage decreases in reverse bias and insertion loss for RF behavior increases with respect to temperature due to the increase in capacitance near diode junction.Keywords: Atlas/Blaze, Schottky barrier, series resistance, ideality factor, insertion loss.