Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Space charge distribution limitation on scaled down of MNOS memory devices;Hampton;IEDM Dig,1979
2. Formation of 20–25 A thermal oxide films on silicon at 950°–1140°C;Aboaf;J Electrochem Soc,1971
3. Thermal oxidation of silicon in various oxygen partial pressures dilluted by nitrogen;Kamigaki;J Appl Phys,1977
4. Study of thin gate oxides grown in an ultra-dry/clean-triple-wall oxidation furnace system;Yoon;J Electron Mater,1990
5. Structure analysis of silicon dioxide films formed by oxidation of silane;Nagasima;J Appl Phys,1972
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