0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs-Reference-Cited by-同舟云学术

0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Published:2000-09 Issue:9 Volume:44 Page:1685-1688
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zaknoune M,Cordier Y,Bollaert S,Ferre D,Théron D,Crosnier Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Metamorphic InAlAs/InGaAs HEMT’s on GaAs substrates with a novel composite channels design;Chertouk;IEEE Electron Device Lett,1996

2. A 0.1-μm Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates;Wang;IEEE Trans Electron Devices,1988

3. A InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage;Zaknoune;IEEE Electron Device Lett,1998

4. Salmer G, Cordier Y. Metamorphics: extending the limits of GaAs. Proceedings of 27th European Solid-State Device Research Conference, Stuttgart, September 1997, p. 77–87

5. Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates;Chyi;J Appl Phys,1996

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

2. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE;Semiconductors;2003-09

3. Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy;Journal of Applied Physics;2003-04

4. Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness;IEEE Transactions on Electron Devices;2002-03

5. Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate;Solid-State Electronics;2002-01