Deep level investigation on n-In0.35Ga0.65As/GaAs structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy
2. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance
3. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
4. Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs
5. Multiple dislocation loops in linearly graded InxGa1−xAs (0≤x≤0.53) on GaAs and InxGa1−xP (0≤x≤0.32) on GaP
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