Investigation of impact ionization using the balance-equation approach for multivalley nonparabolic semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Problems related to p-n junctions in silicon
2. Theory of Electron Multiplication in Silicon and Germanium
3. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
4. Lucky-drift mechanism for impact ionisation in semiconductors
5. Modification of the lucky drift theory of impact ionisation for investigation of soft thresholds
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of theoretical efficiency limit of hot carriers solar cells with a bulk indium nitride absorber;Journal of Applied Physics;2010-11
2. Terahertz-Induced Impact Ionization Effect in Semiconductor Heterojunctions;Japanese Journal of Applied Physics;2005-10-11
3. Balance-equation approach to impact ionization induced by an intense terahertz radiation: Application to InAs/AlSb heterojunctions;The European Physical Journal B - Condensed Matter;2002-10-01
4. Interband impact ionization in THz-driven InAs/AlSb heterostructures;Semiconductor Science and Technology;2002-02-18
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