Modification of the lucky drift theory of impact ionisation for investigation of soft thresholds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Lucky-drift mechanism for impact ionisation in semiconductors
2. Problems related to p-n junctions in silicon
3. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
4. Theory of Electron Multiplication in Silicon and Germanium
5. A model for impact ionisation in wide-gap semiconductors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations;Physical Review B;2004-04-08
2. Investigation of impact ionization using the balance-equation approach for multivalley nonparabolic semiconductors;Solid-State Electronics;1998-03
3. Avalanche multiplication properties of GaAs calculated from spatially transient ionisation coefficients;Solid-State Electronics;1995-12
4. Impact ionization in balance equation theory;Journal of Physics: Condensed Matter;1995-10-02
5. Spatio-temporal impact ionisation transients: A Lucky drift model study in GaAs;Solid-State Electronics;1995-02
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