Lucky-drift mechanism for impact ionisation in semiconductors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=17/a=020/pdf
Reference18 articles.
1. Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors
2. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors
3. Comment on ’’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’’ and on ’’Band‐structure dependent transport and impact ionization in GaAs’’
4. Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach
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