An improved silicon-oxidation-kinetics and accurate analytic model of oxidation-Reference-Cited by-同舟云学术

An improved silicon-oxidation-kinetics and accurate analytic model of oxidation

Published:2003-10 Issue:10 Volume:47 Page:1699-1705
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jimin Wang,Yu Li,Ruiwei Li

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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2. ATHENA user’s manual, SILVACO International Inc.; April 1997

3. A new analytical model of the bird’s beak;Guillemot;IEEE Trans.,1987

4. Chen D. Two dimension oxidation modeling and applications. PhD thesis, Department of Electrical Engineering, Stanford University, June 1983

5. Massoud HZ. Thermal oxidation of silicon in dry oxygen growth kinetics and charge characteristicization in the thin regime. Technical Report, Stanford Electronic Laboratories, Stanford University, June 1983

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