Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics-Reference-Cited by-同舟云学术

Thermal Oxidation of Porous Silicon: Study on Reaction Kinetics

Published:2004-08-01 Issue:34 Volume:108 Page:12744-12747
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Pap Andrea Edit¹,Kordás Krisztián¹,George Thomas F.¹,Leppävuori Seppo¹

Affiliation:

1. Microelectronics & Materials Physics Laboratories, Department of Electrical and Information Engineering, EMPART Research Group of Infotech Oulu, University of Oulu, P.O. Box 4500, 90014-FIN Oulu, Finland, and Office of the Chancellor/Departments of Chemistry & Biochemistry and Physics & Astronomy, University of MissouriSt. Louis, St. Louis, Missouri 63121

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp049323y

Reference26 articles.

1. Room temperature oxidation of porous silicon in air

2. The room temperature oxidation of porous silicon

3. Light guiding in oxidised porous silicon optical waveguides

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