Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al-Reference-Cited by-同舟云学术

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Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

Published:2018-01 Issue: Volume:81 Page:113-117
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Wang Yan-Feng,Chang Xiaohui,Zhang Xiaofan,Fu Jiao,Fan Shuwei,Bu Renan,Zhang Jingwen,Wang Wei,Wang Hong-Xing,Wang Jingjing

Funder

National Natural Science Foundation of China

Technology Coordinate and Innovative Engineering Program of Shaanxi

Postdoctoral Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Microwave performance evaluation of diamond surface channel FETs;Kubovic;Diam. Relat. Mater.,2004

2. Characterization of high-quality polycrystalline diamond and its high FET performance;Ueda;Diam. Relat. Mater.,1954

3. Diamond FET using high-quality polycrystalline diamond with f T of 45GHz and f max of 120GHz;Ueda;IEEE Electron Device Lett.,2006

4. High RF output power for H-terminated diamond FETs;Kasu;Diam. Relat. Mater.,2006

5. AlN as passivation for surface channel FETs on H-terminated diamond;Kueck;Diam. Relat. Mater.,2010

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1. Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics;The Journal of Physical Chemistry Letters;2024-09-05

2. Electrical Characteristics of H-Diamond Transistors With ZrO₂/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation;IEEE Transactions on Electron Devices;2024-03

3. Normally-off n-ZnO/p-diamond heterojunction field effect transistor with recessed gate and current distribution layer;Microelectronics Journal;2023-12

4. High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al ₂ O ₃ dielectric;Functional Diamond;2023-06-13

5. High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric;Results in Physics;2023-06

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