AlN as passivation for surface channel FETs on H-terminated diamond-Reference-Cited by-同舟云学术

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AlN as passivation for surface channel FETs on H-terminated diamond

Published:2010-07 Issue:7-9 Volume:19 Page:932-935
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Kueck D.,Leber P.,Schmidt A.,Speranza G.,Kohn E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Diamond-based RF power transistors: Fundamentals and applications

2. Hydrogen-terminated diamond surfaces and interfaces

3. Int. Electron Devices Meeting (IEDM);Hirama,2007

4. Electrical Properties of Al/CaF2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process

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4. LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond;IEEE Electron Device Letters;2020-06

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