Highly efficient doping of boron into high-quality homoepitaxial diamond films
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
2. Electrical Properties of B-doped homoepitaxial diamond films grown from UHP gas sources
3. Diamond devices and electrical properties
4. Electrical properties of B-doped homoepitaxial diamond (001) film
5. Activation energy in low compensated homoepitaxial boron-doped diamond films
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1. High efficiency of boron doping and fast growth realized with a novel gas inlet structure in diamond microwave plasma chemical vapor deposition system;Carbon Letters;2023-12-13
2. Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films;Chinese Physics B;2023-10-01
3. Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method;Thin Solid Films;2022-01
4. Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition;Journal of Applied Physics;2021-05-21
5. Enhanced electrochemical kinetics of highly-oriented (111)-textured boron-doped diamond electrodes induced by deuterium plasma chemistry;Carbon;2021-04
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