Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition-Reference-Cited by-同舟云学术

Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition

Published:2021-05-21 Issue:19 Volume:129 Page:195702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Seki Yuhei¹,Hoshino Yasushi¹^ORCID,Nakata Jyoji¹

Affiliation:

1. Department of Mathematics and Physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0048309

Reference30 articles.

1. Activation of boron-dopant atoms in ion-implanted diamonds

2. Post-processing of diamond and diamond films: a review of some Harwell work

3. An ion-implanted diamond metal-insulator-semiconductor field-effect transistor

4. Boron implantation/in situ annealing procedure for optimal p ‐type properties of diamond

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