Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition
Author:
Affiliation:
1. Department of Mathematics and Physics, Kanagawa University, 2946, Tsuchiya, Hiratsuka, Kanagawa 259-1293, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048309
Reference30 articles.
1. Activation of boron-dopant atoms in ion-implanted diamonds
2. Post-processing of diamond and diamond films: a review of some Harwell work
3. An ion-implanted diamond metal-insulator-semiconductor field-effect transistor
4. Boron implantation/in situ annealing procedure for optimal p ‐type properties of diamond
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1. The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure;Japanese Journal of Applied Physics;2023-04-01
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4. Study of horizontal and vertical uniformity of B-doped layer on mosaic single crystal diamond wafers by using hot-filament chemical vapor deposition;Functional Diamond;2022-05-05
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