Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method-Reference-Cited by-同舟云学术

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Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method

Published:2022-01 Issue: Volume:741 Page:139026
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Maida Osamu,Kanemoto Daiskuke,Hirose Tetsuya

Funder

Japan Society for the Promotion of Science

Iketani Science and Technology Foundation

Nippon Sheet Glass Foundation for Materials Science and Engineering

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Intrinsic edge absorption in diamond;Clark;Proc. R. Soc. London A,1963

2. Nonmetallic crystals with high thermal conductivity;Slack;J. Phys. Chem. Solids,1973

3. Thermal diffusivity of isotopically enriched 12C Diamond;Anthony;Phys. Rev. B,1990

4. Exceptionally high voltage Schottky diamond diodes and low boron doping;Butler;Semicond. Sci. Technol.,2003

5. Modelling of single-crystal diamond Schottky diodes for high-voltage applications;Rashid;Diamond Relat. Mater.,2006

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient Parameter Extraction Methods;Extraction of Semiconductor Diode Parameters;2024

2. Transient photocapacitance spectroscopy on Au/TiO2 Schottky diodes with rolled-up nanomembrane electrodes;Journal of Applied Physics;2023-02-14

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