Effect of prior C, Si and Sn implantation on the etch rate of CVD diamond-Reference-Cited by-同舟云学术

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Effect of prior C, Si and Sn implantation on the etch rate of CVD diamond

Published:2006-09 Issue:9 Volume:15 Page:1266-1270
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Leech P.W.,Perova T.,Moore R.A.,Reeves G.K.,Holland A.S.,Ridgway M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Legionella inactivation with diamond electrodes

2. Diamond-derived microelectrodes array for electrochemical analysis

3. Precise patterning of diamond films for MEMS application

4. A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates

5. Surface smoothing of diamond membranes by reactive ion etching process

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8;Journal of Crystal Growth;2009-01

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