Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
2. Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
3. In situ substrate preparation for high-quality SiC chemical vapour deposition
4. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
5. The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology
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1. Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers;physica status solidi (b);2024-02-10
2. High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2;Journal of Crystal Growth;2024-01
3. Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping;Journal of Crystal Growth;2023-04
4. Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
5. High temperature isotropic and anisotropic etching of silicon carbide using forming gas;Journal of Vacuum Science & Technology A;2021-01
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