Electronic transport properties of B/N/P co-doped armchair graphene nanoribbon field effect transistor-Reference-Cited by-同舟云学术

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Electronic transport properties of B/N/P co-doped armchair graphene nanoribbon field effect transistor

Published:2022-04 Issue: Volume:124 Page:108893
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Wen Ruolan,Jiang Zhenhong,Miao Rui,Wang Lei,Liang Yujian,Deng Jingui,Shao Qingyi,Zhang Jian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Graphene transistors;Schwierz;Nat. Nanotechnol.,2010

2. Review on graphene nanoribbon devices for logic applications;Marmolejo-Tejada;Microelectron. J.,2016

3. First principle study of doped graphene for FET applications;Narendar;Silicon,2018

4. Graphene-based field effect transistors as biosensors;Andronescu;Curr.Opin.Electrochem.,2017

5. The electronic properties of graphene;Castro Neto;Rev. Mod. Phys.,2009

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. H/O edge passivated B/N co-doped armchair graphene nanoribbon field-effect transistors, based on first principles;Physica Scripta;2024-06-27

2. Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor;Ferroelectrics;2024-02-20

3. Geometric and Electronic Properties of Graphene Nanoribbons;Handbook of Functionalized Carbon Nanostructures;2024

4. Regulation of negative differential resistance behavior of zigzag GeSe nanoribbon by the doping of N atoms and edge passivation;Ferroelectrics;2023-10-26

5. Independent Dual-Channel Approach to Mesoscopic Graphene Transistors;Nanomaterials;2022-09-16

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