Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation

Author:

Angarano M.M,Báder A,Creanza D,de Palma M,Fiore L,Maggi G,My S,Raso G,Selvaggi G,Tempesta P

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. C. LeVier, Capacitance in Silicon Strip Detectors, UC, Santa Cruz, Senior Thesis, SCIIP 92/26.

2. Capacitances in silicon microstrip detectors

3. C. Bozzi, Signal-to-noise evaluation for the CMS silicon microstrip detectors, CERN CMS NOTE 1997/026.

4. CMS, The Tracker Project, Technical Design Report, CERN/LHCC 98-6 CMS TDR, 1998.

5. Type inversion in silicon detectors

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1. Study of the annealing effect on silicon microstrip detectors built on and substrates after proton irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-09

2. A comparison on radiation tolerance of microstrip detectors built on and silicon substrates after proton irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-06

3. A comparison on radiation tolerance of and silicon substrates of microstrip detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01

4. A review of design considerations for the sensor matrix in semiconductor pixel detectors for tracking in particle physics experiments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-06

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