A comparison on radiation tolerance of and silicon substrates of microstrip detectors-Reference-Cited by-同舟云学术

A comparison on radiation tolerance of and silicon substrates of microstrip detectors

Published:2002-01 Issue:3 Volume:476 Page:744-750
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Calefato G.,Creanza D.,de Palma M.,Fiore L.,My S.,Radicci V.,Selvaggi G.,Tempesta P.,Angarano M.M.,Bilei G.M.,Biasini M.,Giorgi M.,Militaru O.,Servoli L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. S. Braibant, et al., Investigation of designed parameters and choice of substrate resistivity and crystal orientation for the CMS silicon microstrip detector, CMS NOTE 2000/011.

2. Physics of Semiconductors Devices;Sze,1981

3. D. Passeri, et al., Parasitic capacitance in thick-substrate silicon microstrip detectors, Nucl. Instr. and Meth. A 476 (3) (2002), these proceedings.

4. The Rose collaboration, Second RD48 Status Report, CERN/LHCC 98-39, 1998.

5. M. Moll, Radiation Damage in Silicon Particle Detectors, DESY-THESIS-1999-040.

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