Type inversion in silicon detectors-Reference-Cited by-同舟云学术

Type inversion in silicon detectors

Published:1992-01 Issue:1-2 Volume:311 Page:98-104
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Pitzl D.,Cartiglia N.,Hubbard B.,Hutchinson D.,Leslie J.,O'Shaughnessy K.,Rowe W.,Sadrozinski H.F.-W.,Seiden A.,Spencer E.,Ziock H.J.,Ferguson P.,Holzscheiter K.,Sommer W.F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Tracking at 1 TeV

2. Radiation levels in SSC detectors

3. Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation

4. High resistivity silicon for detector applications

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