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CV and Hall effect analysis on neutron irradiated silicon detectors

  • Published:1997-04 Issue:3 Volume:388 Page:330-334
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Biggeri U,Borchi E,Bruzzi M,Lazanu S,Li Z

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation of Low Gain Avalanche Detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2016-11

2. Backside doping profiles of irradiated silicon detectors;Journal of Instrumentation;2013-04-19

3. Radiation damage in silicon detectors for high-energy physics experiments;IEEE Transactions on Nuclear Science;2001-08

4. Study of breakdown effects in silicon multiguard structures;IEEE Transactions on Nuclear Science;1999-08

5. Hall effect analysis in irradiated silicon samples with different resistivities;IEEE Transactions on Nuclear Science;1999-08
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