Hall effect analysis on neutron irradiated high resistivity silicon-Reference-Cited by-同舟云学术

Hall effect analysis on neutron irradiated high resistivity silicon

Published:1995-06 Issue:1-2 Volume:360 Page:131-133
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Biggeri U.,Borchi E.,Bruzzi M.,Lazanu S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

2. these Proceedings (6th Pisa Meeting on Advanced Detectors);Chilingarov,1995

3. 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors;Li,1994

4. 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors;Kegel,1994

5. 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors;Biggeri,1994

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2. Damage induced in semiconductors by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07

4. Frequency dependence of ac conductance of neutron irradiated silicon detectors to fluences up to 1016 n/cm2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02