The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference20 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Piezoelectric effects in strained‐layer superlattices
3. Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures
4. Electronic structure and field screening effects in 111 InGaAs-GaAs strained layer piezoelectric quantum-wells
5. Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties;IEE Proceedings - Optoelectronics;2003
2. Optical transitions of Al 0.35 Ga 0.65 As/GaAs asymmetric double quantum wells grown on GaAs( n 11)A ( n ≤4) substrates;Microelectronics Journal;1999-04
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