Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112787
Reference11 articles.
1. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
2. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
3. Optical properties of strained-layer superlattices with growth axis along [111]
4. Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs
5. Determining the electric field in [111] strained‐layer quantum wells
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4. Enhanced Stark Tuning of Single InAs(211)BQuantum Dots due to Nonlinear Piezoelectric Effect in Zincblende Nanostructures;Physical Review Applied;2016-07-13
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