Implementation of triple-value memory cell based carbon nanotube field-effect transistor

Author:

mousavi Rasool,Eslami Mahdi,hajipour Pedram

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference20 articles.

1. Weste N. Harris D. CMOS VLSI design: a circuits and systems perspective. (4th ed. Addison-Wesley Publishing Company. USA; 2010.

2. Performance analysis of CNFET based 6T SRAM;Manjit;COJ Electron Commun,2013

3. Design of a ternary memory cell using CNTFETs;Lin;IEEE Trans Nanotechnol,2012

4. Selvan, STamil and Sundararajan, M. Design and implementation of CNTFET base ternary1x1memories. Int. J. of Reconfigurable and Embedded Systems.2019; 8(3):175–184. https://10.11591/ijres.v8.i3.pp175-184.

5. Hellkamp D. Kundan N. True three-valued ternary content addressable memory cell based on ambipolar carbon nanotube transistors. J Circ Sys Comput 2019;28(5):1–20. https:// 10.1142/S0218126619500853.

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